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BB101M build in biasing circuit mos fet ic uhf rf amplifier ade-208-504 1st. edition features build in biasing circuit; to reduce using parts cost & pc board space. low noise characteristics; (nf = 2.0 db typ. at f = 900 mhz) withstanding to esd; build in esd absorbing diode. withstand up to 200 v at c = 200 pf, rs = 0 conditions. outline 1. source 2. gate1 3. gate2 4. drain mpak-4 1 4 3 2
BB101M 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v ds 6v gate 1 to source voltage v g1s +6 ? v gate 2 to source voltage v g2s 6v drain current i d 25 ma channel power dissipation pch 150 mw channel temperature tch 150 c storage temperature tstg ?5 to +150 c
BB101M 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 6vi d = 200 m a v g1s = v g2s = 0 gate 1 to source breakdown voltage v (br)g1ss +6 v i g1 = +10 m a v g2s = v ds = 0 gate 2 to source breakdown voltage v (br)g2ss 6 v i g2 = 10 m a v g1s = v ds = 0 gate 1 to source cutoff current i g1ss +100 na v g1s = +5 v v g2s = v ds = 0 gate 2 to source cutoff current i g2ss 100 na v g2s = 5 v v g1s = v ds = 0 gate 1 to source cutoff voltage v g1s(off) 0.2 0.8 v v ds = 5 v, v g2s = 4 v i d = 100 m a gate 2 to source cutoff voltage v g2s(off) 0.4 1.0 v v ds = 5 v, v g1s = 5 v i d = 100 m a drain current i d(op) 10 15 20 ma v ds = 5 v, v g1 = 5 v v g2s = 4 v, r g = 220 k w forward transfer admittance |y fs | 16 22 ms v ds = 5 v, v g1 = 5 v, v g2s = 4 v, r g = 220 k w , f = 1 khz input capacitance ciss 1.2 1.7 2.2 pf v ds = 5 v, v g1 = 5 v output capacitance coss 0.7 1.1 1.5 pf v g2s = 4 v, r g = 220 k w reverse transfer capacitance crss 0.012 0.03 pf f = 1 mhz power gain pg 16 20 db v ds = 5 v, v g1 = 5 v v g2s = 4 v noise figure nf 2.0 3.0 db r g = 220 k w , f = 900 mhz note: marking is ?u.
BB101M 4 main characteristics test circuit for operating items (i , |yfs|, ciss, coss, crss, nf, pg) application circuit d(op) gate 1 source drain gate 2 r g a i d v g2 v g1 output input v = 4 to 0.3 v agc v = 5 v ds r g v = 5 v gg bbfet
BB101M 5 200 150 100 50 0 50 100 150 200 channel power dissipation pch (mw) ambient temperature ta ( c) maximum channel power dissipation curve 25 20 15 10 5 0 1 2345 100 k w 120 k w 150 k w 180 k w 220 k w 270 k w 330 k w 390 k w r g = 470 k w drain to source voltage v ds (v) drain current i d (ma) typical output characteristics v g2s = 4 v v g1 = v ds 25 20 15 10 5 0 1 2345 gate2 to source voltage v g2s (v) drain current i d (ma) drain current vs. gate2 to source voltage v ds = v g1 = 5 v 150 k w 180 k w 220 k w 270 k w r = 470 k w g 120 k w 100 k w 330 k w 390 k w 20 16 12 8 4 0 12345 v g2s = 1 v v ds = 5 v r g = 150 k w 4 v 3 v 2 v gate1 voltage v g1 (v) drain current i d (ma) drain current vs. gate1 voltage
BB101M 6 20 16 12 8 4 0 1 2345 gate1 voltage v g1 (v) drain current i d (ma) v g2s = 1 v 4 v 3 v 2 v v ds = 5 v r g = 220 k w drain current vs.gate1 voltege 20 16 12 8 4 0 1 2345 4 v 3 v 2 v v g2s = 1 v v ds = 5 v r g = 390 k w gate1 voltage v g1 (v) drain current i d (ma) drain current vs.gate1 voltege 25 20 15 10 5 0 1 2345 forward transfer admittance |y | (ms) fs forward transfer admittance vs. gate1 voltage gate1 voltage v g1 (v) v g2s = 1 v 4 v 3 v 2 v v ds = 5 v r g = 150 k w f = 1 khz 25 20 15 10 5 0 12345 forward transfer admittance |y | (ms) fs 4 v 3 v 2 v v g2s = 1 v v ds = 5 v r g = 220 k w f = 1 khz forward transfer admittance vs. gate1 voltage gate1 voltage v g1 (v)
BB101M 7 25 20 15 10 5 0 1 2345 forward transfer admittance |y | (ms) fs forward transfer admittance vs. gate1 voltage gate1 voltage v g1 (v) v g2s = 1 v 4 v 3 v 2 v v ds = 5 v r g = 390 k w f = 1 khz power gain vs. gate resistance 30 25 20 15 10 5 0 50 100 200 500 1000 2000 5000 gate resistance r g (k w ) power gain pg (db) v ds = 5 v v g1 = 5 v v g2s = 4 v f = 900 mhz noise figure vs. gate resistance 0 50 100 200 500 1000 2000 5000 gate resistance r g (k w ) noise figure nf (db) 4 3 2 1 v ds = 5 v v g1 = 5 v v g2s = 4 v f = 900 mhz 30 25 20 15 10 5 0 power gain pg (db) power gain vs. drain current drain current i d (ma) 510152025 30 v ds = 5 v v g1 = 5 v v g2s = 4 v r g = variable f = 900 mhz
BB101M 8 0 noise figure nf (db) noise figure vs. drain current drain current i d (ma) 510152025 30 4 3 2 1 v ds = 5 v v g1 = 5 v v g2s = 4 v r g = variable f = 900 mhz 30 25 20 15 10 5 0 drain current i d (ma) drain current vs. gate resistance gate resistance r g (k w ) 10 30 100 300 1000 3000 10000 v ds = 5 v v g1 = 5 v v g2s = 4 v 40 30 20 10 0 gain reduction gr (db) gain reduction vs. gate2 to source voltage gate2 to source voltage v g2s (v) 1234 5 v = 5 v v = 5 v v = 4 v r = 220 k f = 900 mhz ds g1 g2s g w 4 3 2 1 0 input capacitance ciss (pf) input capacitance vs. gate2 to source voltage gate2 to source voltage v g2s (v) 1234 5 v = 5 v v = 5 v r = 220 k f = 1 mhz ds g1 g w
BB101M 9 4 3 2 1 0 output capacitance coss (pf) output capacitance vs. gate2 to source voltage gate2 to source voltage v g2s (v) 1234 5 v ds = 5 v v g1 = 5 v r g = 220 k f = 1 mhz w
BB101M 10 package dimentions unit: mm 0.16 0 ~ 0.1 0.3 + 0.1 ?0.06 0.95 0.85 1.8 0.65 + 0.1 ?0.3 1.5 0.65 + 0.1 ?0.3 1.1 + 0.2 ?0.1 0.95 0.95 1.9 2.8 + 0.3 ?0.1 0.4 + 0.1 ?0.05 0.4 + 0.1 ?0.05 0.6 + 0.1 ?0.05 0.4 + 0.1 ?0.05 2.8 + 0.2 ?0.6 3 2 4 1 hitachi code eiaj jedec mpak? sc?1aa
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